We are exclusively representing a well-funded, globally recognised semiconductor IDM within power semiconductors.

Following £multi-million investment in 2025 into R&D, our client is looking to strengthen its R&D capabilities by securing a leader for their chip research, design and development department.

A summary of the responsibilities is below:

Leading the research and development of advanced silicon and Wide Band Gap power semiconductors, such as IGBTs, SJ-RC-IGBTs SiC MOSFET, GaN and Ga203 devices Technical leadership on device principle structure, characteristics, process, reliability, including MOSFET, IGBT, FRD HEMT etc Working towards the next generation of power semiconductor chips and designing strategies in combination with other departments for future product discovery 2D/3D TCAD simulations using Silvaco or Synopsys Data analysis to correlate simulation data and test results Test and characterisation Providing oversight to projects to ensure they are on track Team leadership of 5 reports

Required experience:

Demonstrated background and experience designing IGBTs, SJ-RC-IGBTs, SiC MOSFET, GaN, and Ga203 devices Expertise in WBG and UWBG technologies Prior team leadrship/managerial ...